1 February 1992 Electronic transport processes in disordered semiconductors
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.56994
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
This paper will review the theory of hopping conductivity and present some recent results for many-electron systems. In strongly disordered semiconductors at low temperatures the dominant transport process is electron hopping. This mechanism is relevant to conduction in amorphous semiconductors, impurity bands and some conducting polymers. A consistent theory of the process in a one-electron approximation is obtained in a rate equation approach and an approximate solution is given by the Extended Pair Approximation. Its results are consistent with large scale computer simulations and experiments. For the acceptor conductivity a universal scaling relationship can be inferred and this allows a strong classification of systems to be made. Impurity conduction in the presence of electron-electron interactions is studied by analytical and numerical techniques. At low temperatures there is a Coulomb gap in the density of states. Simulations of the percolation problem show the gross features of the behavior of the dc conductivity. It may be inferred that there is an effective one-electron mechanism in which the Coulomb gap has questionable importance.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Summerfield, "Electronic transport processes in disordered semiconductors", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.56994; https://doi.org/10.1117/12.56994
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