Exciton mobility in a GaAs/AlGaAs quantum well

Partha Ray; P. K. Basu

doi:10.1117/12.57039

1 February 1992 Exciton mobility in a GaAs/AlGaAs quantum well

Partha Ray, P. K. Basu

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57039
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

We have calculated the mobility of 1s-excitons confined in a GaAs/AlGaAs quantum well limited by different scattering mechanisms over a temperature range from 10 K to 150 K for different well-widths.

Citation Download Citation

Partha Ray and P. K. Basu "Exciton mobility in a GaAs/AlGaAs quantum well", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.57039

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