1 February 1992 Growth and XPS depth profiling of thermal oxides on polycrystalline GaAs thin films
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.56996
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
Oxide layers on polycrystalline GaAs thin films were grown by thermal oxidation at 10-4 torr. In depth profiles of the oxide layers were obtained by in situ Ar+ ion etching in x-ray photoelectron studies at different stages of sputter etching. These studies reveal a pile-up of elemental As at the interface between the GaAs film and the oxide layer. The observed compositional variation in the oxide layer at different depths is related to the selective sputtering of As O to As. Some of these results are presented.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. S.V. Avadhani, S. Kasi Viswanathan, and B. S. V. Gopalam "Growth and XPS depth profiling of thermal oxides on polycrystalline GaAs thin films", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.56996; https://doi.org/10.1117/12.56996
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