Hydrogenation effects on Ni/n-Si(111) Schottky diode characteristics

P. P. Sahay; M. Shamsuddin; R. S. Srivastava

doi:10.1117/12.57022

1 February 1992 Hydrogenation effects on Ni/n-Si(111) Schottky diode characteristics

P. P. Sahay, M. Shamsuddin, R. S. Srivastava

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57022
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

Experiments have been performed on Ni/n-Si(111) Schottky diodes fabricated by the thermal vacuum deposition of nickel on n/n⁺ Si epitaxial wafers at approximately 10^-5 torr pressure. (I - V) and (C - V) characteristics have been measured at different frequencies in the range 10 KHz-1 MHz. Hydrogenation effects on the diode characteristics have been reported from (I - V) and (C - V) studies. It has been found that hydrogen lowers the work function of nickel and also generates the interfacial traps at the Si- SiO₂ interface. These results are found in agreement with the results based on transient capacitance response and (C - V) studies. Slight passivation of deep donor states responding the low frequency test signal has also been observed after hydrogenating the diode. Interface states parameters have been extracted from (C - V) characteristics using the metal-interfacial layer semiconductor (MIS) structure model.

Citation Download Citation

P. P. Sahay, M. Shamsuddin, and R. S. Srivastava "Hydrogenation effects on Ni/n-Si(111) Schottky diode characteristics", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.57022

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