Influence of doping concentration and interface state density on grain boundary barrier height of polycrystalline silicon

Dharmendra P. Singh; P. S. Basak

doi:10.1117/12.57021

1 February 1992 Influence of doping concentration and interface state density on grain boundary barrier height of polycrystalline silicon

Dharmendra P. Singh, P. S. Basak

Author Affiliations +

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57021
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

Grain boundaries play an important role in the conductance of polycrystalline semiconductors. In the present work we have studies for the first time the effect of doping concentration on the grain boundary barrier height for different interface state density for polysilicon, considering that the grain boundary has certain finite width.

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Dharmendra P. Singh and P. S. Basak "Influence of doping concentration and interface state density on grain boundary barrier height of polycrystalline silicon", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.57021

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