1 February 1992 Influence of doping concentration and interface state density on grain boundary barrier height of polycrystalline silicon
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992); doi: 10.1117/12.57021
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
Grain boundaries play an important role in the conductance of polycrystalline semiconductors. In the present work we have studies for the first time the effect of doping concentration on the grain boundary barrier height for different interface state density for polysilicon, considering that the grain boundary has certain finite width.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dharmendra P. Singh, P. S. Basak, "Influence of doping concentration and interface state density on grain boundary barrier height of polycrystalline silicon", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57021; https://doi.org/10.1117/12.57021
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KEYWORDS
Doping

Silicon

Interfaces

Semiconductors

Solar cells

Cadmium sulfide

Electroluminescence

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