1 February 1992 Mechanism of etching of silicon-based materials in a reactive plasma
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.56974
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
The numerous interdependent variables existing in the reactive ion etch process complicates the understanding of the etch mechanisms operating in the plasma processing. The knowledge of the exact mechanisms will, however, be useful for developing an etch process with improved etch rate, etch profile, selectivity, uniformity, etc. The results of a detailed study on the etch behavior of Si, SiO2, and Si3 N4 in fluorine and chlorine containing gas plasmas are reported in this paper, to arrive at some of the possible mechanisms operating in the reactive ion etch process.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vayalakkara Premachandran "Mechanism of etching of silicon-based materials in a reactive plasma", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.56974; https://doi.org/10.1117/12.56974
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