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1 February 1992 Photoemission from the surface of silicon using a simple local dielectric model
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57025
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
Calculations of the variation of the photon field in the surface region of Si is presented which plays a significant role during photoemission. Ab initio calculations of vector potential gives information about the nature of the photocurrent emitted from the surface of Si. The scattering cross-section from the surface of Si is also calculated whose dependents on the photon energy is shown.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. K. Thapa, P. Das, and Nikhiles Kar "Photoemission from the surface of silicon using a simple local dielectric model", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.57025
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