1 February 1992 Postbreakdown behaviour of metal-oxide-semiconductor diodes
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57016
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
Metal-Oxide-Semiconductor (MOS) diodes with approximately equals 300 angstroms thick, thermally grown silicide dioxide (SiO2) films were subjected to time-dependent oxide breakdown (TDOB) by applying a constant voltage (electrical stress). The breakdown of the oxide was achieved under the accumulation region of the substrate. After the breakdown of the oxide, V - I characteristics of the devices were measured. The observed characteristics are similar to the characteristics of a solid-state rectifier in nature. This behavior of the MOS samples has been qualitatively explained in this paper, on the basis of the nucleation and growth of the crystalline silicon from the oxide layers during the oxide breakdown process.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. S. Gurumurthy, Krishnaswamy Ramkumar, M. Satyam, "Postbreakdown behaviour of metal-oxide-semiconductor diodes", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57016; https://doi.org/10.1117/12.57016
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