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1 February 1992 Preparation and characterization of pulse-plated CdSe films
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.56960
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
Pulse deposition at room temperature was applied to obtain CdSe thin films from an aqueous bath consisting of CdSO4 and SeO2 on titanium substrates, employing a range of current densities from 80 - 550 mA cm-2. The films were polycrystalline with a hexagonal structure. The pulse deposited films were observed to show greater uniformity and large grain sizes than the conventionally deposited ones. The films, heat-sensitized and vacuum annealed, showed a flat-band potential of -1.17 V (SCE) and a high energy conversion efficiency of 6.3% at 60 mW cm2 in polysulphide redox after photoetching. The optical band gap was 1.7 eV.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. R. Murali, V. Subramanian, N. Rangarajan, A. S. Lakshmanan, and S. K. Rangarajan "Preparation and characterization of pulse-plated CdSe films", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.56960
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