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1 February 1992 Properties of 35-GHz InP DDR
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57038
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
Microwave device characteristics of 35 GHz InP DDR have been obtained through accurate numerical simulation, and those are compared with the properties of Si and GaAs DDRs. The results indicate InP as a promising material for fabrication of IMPATT devices.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shankar P. Pati, J. P. Banerjee, and S. K. Ray "Properties of 35-GHz InP DDR", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.57038
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