1 February 1992 Quantum-well injection transit time device
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57001
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
A quantum well injection transit time (QWITT) diode has been proposed recently to improve the performance of quantum well devices incorporating the effect of transit time of carriers. Earlier, transit time devices such as IMPATT, BARITT, DOVATT, TRAPATT, TUNETT show different types of performances with certain limitations. QWITT is a low noise device applicable to the sub-millimeter frequency range. Large signal simulations show that a QWITT device may be capable of producing approximately +5 dBm power at 200 GHz.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. B. Pal, B. B. Pal, R. U. Khan, R. U. Khan, "Quantum-well injection transit time device", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57001; https://doi.org/10.1117/12.57001
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