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1 February 1992 Room temperature hydrogenation studies on silicon
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.56980
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
Pd/Si devices both on n/n+ and p/p+ substrates have been placed in hydrogen atmosphere with the intention of introducing atomic hydrogen in silicon at room temperature. The palladium films on the top of the silicon substrates absorbs hydrogen to form PdHx, and the hydrogen is subsequently released into silicon, which causes the passivation effect. The shallow dopants, both in n and p silicon substrates, are passivated to the extent of 30% and 50% respectively on hydrogenation. Frequency dispersion of capacitance shows the hydrogen passivation of deep states.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. C. Srivastava, Deep Narayan Tripathi, and S. Chandra "Room temperature hydrogenation studies on silicon", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.56980
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