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1 February 1992 Some aspects of CdTe
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.56999
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
This article mainly deals with the exact origin of 0.15 - 0.20 eV defect level in CdTe--a controversial issue under debate for more than three decades--and some investigations of deep and interface levels in polycrystalline n-CdTe. The first issue still stands unresolved amidst conflicting views from various workers, thereby leaving it surrounded by an air of uncertainty. The results of a study of deep and interface states in Mo-polycrystalline n-Schottky barriers using a deep level spectrometer DLS-82E (Hungary), both in differential DLTS and level profile mode, are also presented. Three deep levels with activation energies of 0.2, 0.43 and 0.65 eV and capture cross-section of the order of 10-18 cm2 detected in the bulk of layers are discussed.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shyam Singh "Some aspects of CdTe", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.56999
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