1 February 1992 Some aspects of CdTe
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.56999
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
This article mainly deals with the exact origin of 0.15 - 0.20 eV defect level in CdTe--a controversial issue under debate for more than three decades--and some investigations of deep and interface levels in polycrystalline n-CdTe. The first issue still stands unresolved amidst conflicting views from various workers, thereby leaving it surrounded by an air of uncertainty. The results of a study of deep and interface states in Mo-polycrystalline n-Schottky barriers using a deep level spectrometer DLS-82E (Hungary), both in differential DLTS and level profile mode, are also presented. Three deep levels with activation energies of 0.2, 0.43 and 0.65 eV and capture cross-section of the order of 10-18 cm2 detected in the bulk of layers are discussed.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shyam Singh, Shyam Singh, } "Some aspects of CdTe", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.56999; https://doi.org/10.1117/12.56999
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