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1 February 1992 Studies on ITO/Si junctions prepared by spray pyrolysis technique
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.56964
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
This paper deals with the photovoltaic behavior of the indium tin oxide (ITO)/silicon (single crystal) heterojunctions prepared by spray pyrolysis technique. The dependence of the photovoltaic properties on process temperature (Tp) and on the oxidation time (tox) have been studied. ITO on p-Si yielded ohmic contact. A photoconversion efficiency of 9.4% is observed (under GE-ELH illumination of 100 mW/cm2) for both small (0.04 cm2) and large (1.0 cm2) areas of ITO/n-Si junctions prepared at a temperature of 380 degree(s)C and for an oxidation time of 60 sec. The junctions are observed to be quite stable with time. An attempt is made to understand the interfacial oxide layer (SiOx) and its effect on the photoconversion in these junctions.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Subrahmanyam and V. Vasu "Studies on ITO/Si junctions prepared by spray pyrolysis technique", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.56964
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