Paper
1 February 1992 Thermal analysis of (ZnTe)x(CdSe)1-x crystals
V. K. Madhusm Rani, R. P. Vijaya Lakshmi, D. R. Reddy, B. K. Reddy
Author Affiliations +
Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.56968
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
Powders prepared from vapor phase grown single crystals of (ZnTe)x(CdSe)1-x ε in the entire range of x were subjected to differential thermal and thermo gravimetric studies in the temperature range 300 - 1110 K in air atmosphere. The general decrease observed in differential temperature is attributed to vaporization of constituents as II - VI compounds and their alloys evaporate rapidly well below their melting points. Some exothermic peaks were also observed at different temperatures. In samples of all compositions, a very sharp peak around 920 K was observed. All the exothermic peaks in DTA curves showed corresponding effects in TG cures. This shown that the peaks are not associated with phase changes reported in similar other II - VI quaternary namely (ZnSe)x(CdTe)1-x crystals. The heats of reaction did not show any regular variation with composition. The TG peaks are attributed to stable oxidation states of Zn/Cd whereas the dips could be due to the formation of unstable oxides of chalcogens. The rates of reaction/evaporation showed that the vaporization phenomenon dominates over the oxidation processes in samples with <EQ 0.5. This is in conformity with the observed lower growth rates of crystals with x < 0.5.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. K. Madhusm Rani, R. P. Vijaya Lakshmi, D. R. Reddy, and B. K. Reddy "Thermal analysis of (ZnTe)x(CdSe)1-x crystals", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.56968
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KEYWORDS
Crystals

Thermal analysis

Oxidation

Temperature metrology

Crystallography

Platinum

Oxides

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