1 February 1992 Transport properties of Bi-doped Ge-Se glasses
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.56984
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
A series of bulk amorphous samples of Ge15Se85 - xBix (x equals 0, 2, 4, 6, 8, 10) were prepared by the rapid quenching technique. Electrical transport properties such as dc conductivity and thermoelectric power were measured in the temperature range 80 - 350 K. An abrupt increase in the dc conductivity is observed due to the incorporation of Bi into the host Ge-Se system. The conduction sign changed from p to n at 8 < X < 10 as evidenced by the measurement of thermopower. The experimental data is explained in the light of existing theories.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pawan Sikka, "Transport properties of Bi-doped Ge-Se glasses", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.56984; https://doi.org/10.1117/12.56984
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