1 February 1992 Transport properties of semiconducting GaxIn1-xSb solid solutions
Author Affiliations +
Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57023
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
The electrical conductivity, Hall coefficient and Thermoelectric power of well-sintered pellets of semiconducting GaxIn1-xSb solid solutions (x equals 0, 0.2, 0.5, 0.6, 0.8 and 1) were determined in the temperature range 300 - 425 K. Magnetic studies have also been conducted on powder samples over a similar temperature range. The variation of dc electrical conductivity with temperature was found to be in accordance with the Seto's model. Solid solutions with x equals 0.5 and 0.6 have been found to show the Hall effect sign anomaly. Various kinds of scattering mechanisms under different temperature ranges have been observed in different solid solutions. The magnetic susceptibility values of all solid solutions were found to be negative and diamagnetic throughout the temperature range investigated. The Van Vleck paramagnetic susceptibilities have been calculated for GaSb and InSb in the temperature range 300 - 450 K with the help of the bond-orbital model.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. K. Silva P Gupta, P. P. Sahay, M. Shamsuddin, P. Ramachandrarao, "Transport properties of semiconducting GaxIn1-xSb solid solutions", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57023; https://doi.org/10.1117/12.57023
PROCEEDINGS
6 PAGES


SHARE
Back to Top