1 February 1992 Ultrathin oxide (SiOx) grown on HF-treated silicon
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57010
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
Ultrathin tunnel oxides (SiOx) were grown on silicon, pretreated with 5% hydrofluoric acid, using high pressure, low temperature oxidation. These oxides were characterized using variable illumination current-voltage (Voc - Jsc) measurements on semi-transparent metal gate MIS diodes. The open circuit voltage (Voc), short circuit current (Jsc), ideality factor (n) and reverse saturation current (Jo) are studied as a function of oxidation time. The interface state density Dits for the HF treated sample was found to decrease from 2 X 1012 cm-2eV-1 to 9.21 X 1011 cm-2eV-1. Highly reproducible, good quality ultrathin oxides were obtained by pre-treatment of the wafer in hydrofluoric acid.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. T. Paul Benny, E. T. Paul Benny, J. Majhi, J. Majhi, } "Ultrathin oxide (SiOx) grown on HF-treated silicon", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57010; https://doi.org/10.1117/12.57010
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