1 February 1992 XPS depth profile of ion-beam-synthesized A12O3SiO2 composite oxide layers on silicon
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.56979
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
Aluminum films (99.999%) were deposited onto p-type <100< silicon wafers. The samples were implanted at room temperature with 1 X 1017, 3 X 1017 and 5 X 1017 O2PLU - cm-2 at 30 keV. XPS spectra was recorded for Al2p3/2 and Si2p lines at various depths. XPS studies confirmed the formation of Al2O3 at all doses and SiO2 at 5 X 1017 O2+ - cm-2.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. K. Dubey, A. D. Yadav, P. M. Raole, P. D. Prabhawalkar, "XPS depth profile of ion-beam-synthesized A12O3SiO2 composite oxide layers on silicon", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.56979; https://doi.org/10.1117/12.56979
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