1 February 1992 Zn3P2 as a material for optoelectronics devices
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57015
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
Mg-Zn3P2 structures are examined as solar energy converter and broad-range photodetector. A distinct photodichroism observed for junctions prepared on oriented single crystal is applied in light polarization step indicator.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan Misiewicz, Jan Szatkowski, Nella Mirowska, Zbigniew Gumienny, Ewa Placzek-Popko, "Zn3P2 as a material for optoelectronics devices", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57015; https://doi.org/10.1117/12.57015
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