1 February 1992 Zn3P2 as a material for optoelectronics devices
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57015
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
Mg-Zn3P2 structures are examined as solar energy converter and broad-range photodetector. A distinct photodichroism observed for junctions prepared on oriented single crystal is applied in light polarization step indicator.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan Misiewicz, Jan Misiewicz, Jan Szatkowski, Jan Szatkowski, Nella Mirowska, Nella Mirowska, Zbigniew Gumienny, Zbigniew Gumienny, Ewa Placzek-Popko, Ewa Placzek-Popko, } "Zn3P2 as a material for optoelectronics devices", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57015; https://doi.org/10.1117/12.57015
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