1 December 1991 Light scatter variations with respect to wafer orientation in GaAs
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Abstract
Attempting to determine the quality and uniformity of a smooth surface from examination of BRDF raster scans can be a risky business as evidenced by studies of commercially grown and polished GaAs wafers. To demonstrate this, raster scan variations with respect to wafer orientation are presented along with a method for analyzing these variations without the need for making multiple raster scans. Some possible sources of the orientational variations are indicated by the data.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeff L. Brown, "Light scatter variations with respect to wafer orientation in GaAs", Proc. SPIE 1530, Optical Scatter: Applications, Measurement, and Theory, (1 December 1991); doi: 10.1117/12.50519; https://doi.org/10.1117/12.50519
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