1 December 1991 Light scatter variations with respect to wafer orientation in GaAs
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Abstract
Attempting to determine the quality and uniformity of a smooth surface from examination of BRDF raster scans can be a risky business as evidenced by studies of commercially grown and polished GaAs wafers. To demonstrate this, raster scan variations with respect to wafer orientation are presented along with a method for analyzing these variations without the need for making multiple raster scans. Some possible sources of the orientational variations are indicated by the data.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeff L. Brown, Jeff L. Brown, } "Light scatter variations with respect to wafer orientation in GaAs", Proc. SPIE 1530, Optical Scatter: Applications, Measurement, and Theory, (1 December 1991); doi: 10.1117/12.50519; https://doi.org/10.1117/12.50519
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