1 December 1991 Continuous TEM observation of diamond nucleus growth by side-view method
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Proceedings Volume 1534, Diamond Optics IV; (1991); doi: 10.1117/12.48279
Event: San Diego, '91, 1991, San Diego, CA, United States
Abstract
The growth of diamond particles using continuous transmission electron microscope (TEM) observation of a side-view of the sample was studied. Diamonds were synthesized using the DC plasma jet chemical vapor deposition (CVD). Synthesis was followed by TEM observation and this cycle was repeated. The shape of the diamond remained almost the same during growth and there were many small SiC particles on the Si surface. Analysis of this continuous observation suggested there was a thin (about 200 nm) gaseous layer containing CH4 radicals and SiH4 radicals. It appeared the SiC particles helped diamond particle growth on the Si substrate.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasuyuki Gotoh, Kazuaki Kurihara, Yumiko Sawamoto, Toshisuke Kitakohji, "Continuous TEM observation of diamond nucleus growth by side-view method", Proc. SPIE 1534, Diamond Optics IV, (1 December 1991); doi: 10.1117/12.48279; https://doi.org/10.1117/12.48279
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KEYWORDS
Diamond

Particles

Silicon carbide

Silicon

Transmission electron microscopy

Plasma

Chemical vapor deposition

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