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1 December 1991 Plasma parameters in microwave-plasma-assisted chemical vapor deposition of diamond
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Abstract
The gas phase chemistry in microwave plasma assisted chemical vapor deposition of diamond is similar to the chemistry that occurs during the oxidation of hydrocarbons in flames. Rapid interconversion between CH4 and C2H2 occurs via hydrogen abstraction and addition reactions. CO formation occurs in the presence of oxygen. Electrons sufficiently energetic to dissociated H2 and CH4 are present in the plasma. As a result, chemistry normally associated with high temperature (~2000 degree(s)C) hydrocarbon combustion occurs at a relatively low temperature (~800 degree(s)C) in the plasma during diamond deposition.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wayne A. Weimer, Frank M. Cerio, and Curtis E. Johnson "Plasma parameters in microwave-plasma-assisted chemical vapor deposition of diamond", Proc. SPIE 1534, Diamond Optics IV, (1 December 1991); https://doi.org/10.1117/12.48275
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