1 December 1991 Pressure effects in the microwave plasma growth of polycrystalline diamond
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Proceedings Volume 1534, Diamond Optics IV; (1991); doi: 10.1117/12.48274
Event: San Diego, '91, 1991, San Diego, CA, United States
Abstract
Microwave plasma deposition of polycrystalline diamond is investigated over the pressure range 1 to 100 kPa. The conditions of growth, microstructure, and spectroscopic properties of the resulting materials are compared. A phenomenological description of the dependence of diamond microstructure upon growth conditions is developed.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alan B. Harker, Jeffrey F. DeNatale, "Pressure effects in the microwave plasma growth of polycrystalline diamond", Proc. SPIE 1534, Diamond Optics IV, (1 December 1991); doi: 10.1117/12.48274; https://doi.org/10.1117/12.48274
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KEYWORDS
Plasma

Diamond

Microwave radiation

Particles

Etching

Hydrogen

Carbon

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