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1 December 1991 Effects of film thickness on the thermoelectric behavior of pyrolytic ZnO thin film
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Abstract
Thermoelectric power of spray deposited transparent conducting Zinc oxide thin films has been determined from room temperature up to 200 degree(s)C with reference to pure lead, and the thickness as well as temperature dependence of its various parameters have been studied. The Fermi levels were determined using a nondegenerate semiconduction model. The carrier scattering index, the activation energy, and the temperature coefficient of activation energy have also been obtained at various thicknesses and temperatures.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Ghulam Ambia, M. Nurul Islam, and M. Obaidul Hakim "Effects of film thickness on the thermoelectric behavior of pyrolytic ZnO thin film", Proc. SPIE 1536, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion X, (1 December 1991); https://doi.org/10.1117/12.49233
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