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1 December 1991 Photoelectrochemical characteristics of slurry-coated CdSeTe films
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Abstract
Studies on slurry painted CdSexTe1-x photoactive films prepared from CdSe and CdTe synthesized by a low temperature wet process are reported. The films on Ti sub- strates, heat treated at 550°C in argon were polycrystalline with the bandgap increasing and room temperature conductivity decreasing with the x value. In poly- sulphide electrolyte, the films with a composition CdSe0.5Te0.5 gave a Voc of 425 mV, Jsc of 8.5 mA cm-2, FF of 0.54 and η of 3.25% at an illumination of 60 mW cm-2.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. R. Murali, V. Subramanian, N. Rangarajan, A. S. Lakshmanan, and S. K. Rangarajan "Photoelectrochemical characteristics of slurry-coated CdSeTe films", Proc. SPIE 1536, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion X, (1 December 1991); https://doi.org/10.1117/12.49230
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