1 December 1991 Electromagnetically carrier depleted IR photodetector
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Abstract
A method is presented for the thermal noise reduction in a near room-temperature intrinsic IR photodetector. The method is based on suppression of the Auger generation-recombination processes using the Electro-Magnetic Carrier Depletion (EMCD) of a narrow gap semiconductor. The device is a lightly doped narrow gap semiconductor flake with a high backside surface recombination velocity, supplied with electrical contact and placed in a magnetic field. Due to action of the Lorentz force, most of the device depletes in charge carriers, resulting in suppression of the Auger generation and recombination processes. As a result, the I-V characteristic becomes nonlinear, exhibiting regions of high positive and negative resistance. The thermal noise can be dramatically reduced, leading to a substantial improvement of performance. The ultimate detectivity may be determined either by the background radiation or by the Shockley-Read generation, in dependence on the ratio of the background photon flux to the recombination center concentration. The near-BLIP performance is predicted for 10.6 micrometers (Hg,Cd)Te devices, prepared from high quality materials and operated at 225 - 250 K.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zoran G. Djuric, Zoran G. Djuric, Jozef Piotrowski, Jozef Piotrowski, "Electromagnetically carrier depleted IR photodetector", Proc. SPIE 1540, Infrared Technology XVII, (1 December 1991); doi: 10.1117/12.48766; https://doi.org/10.1117/12.48766
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