1 December 1991 Infrared techniques applied to large solar arrays: a ten-year update
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The use of IR technology for solar cell crack detection in the manufacture and inspection of large solar arrays is reviewed. It is concluded that silicon CCD technology was used to develop IR technology for GaAs-on-GaAs at 1.0 micron, and PtSi technology was used to develop GaAs-on-Ge IR technology at 2-2.5 microns. IR crack inspection for the thinner, etched silicon solar cells of large, flexible solar wings was developed to visualize their cracks, because the surfaces of these cells were pitted.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James R. Hodor, James R. Hodor, Herman J. Decker, Herman J. Decker, Jesus J. Barney, Jesus J. Barney, } "Infrared techniques applied to large solar arrays: a ten-year update", Proc. SPIE 1540, Infrared Technology XVII, (1 December 1991); doi: 10.1117/12.48737; https://doi.org/10.1117/12.48737


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