Long-wavelength GaAs/AlxGa1-xAs quantum-well infrared photodetectors

Barry F. Levine; Clyde G. Bethea; J. W. Stayt Jr.; Kenneth G. Glogovsky; Ronald E. Leibenguth; Sarath D. Gunapala; Shin-Shern Pei; Jenn-Ming Kuo

doi:10.1117/12.48742

1 December 1991 Long-wavelength GaAs/Al_xGa_1-xAs quantum-well infrared photodetectors

Barry F. Levine, Clyde G. Bethea, J. W. Stayt Jr., Kenneth G. Glogovsky, Ronald E. Leibenguth, Sarath D. Gunapala, Shin-Shern Pei, Jenn-Ming Kuo

Author Affiliations +

Proceedings Volume 1540, Infrared Technology XVII; (1991) https://doi.org/10.1117/12.48742
Event: San Diego, '91, 1991, San Diego, CA, United States

Abstract

We discuss the physics and 128 X 128 array imaging performance of GaAs/AlxGa1-xAs n-doped quantum well infrared photodetectors (QWIPs). The device physics of novel p-doped QWIPs which respond to normal incidence radiation of also presented.

Citation Download Citation

Barry F. Levine, Clyde G. Bethea, J. W. Stayt Jr., Kenneth G. Glogovsky, Ronald E. Leibenguth, Sarath D. Gunapala, Shin-Shern Pei, and Jenn-Ming Kuo "Long-wavelength GaAs/Al_xGa_1-xAs quantum-well infrared photodetectors", Proc. SPIE 1540, Infrared Technology XVII, (1 December 1991); https://doi.org/10.1117/12.48742

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