Paper
1 November 1991 High contrast ratio InxGa1-xAs/GaAs multiple-quantum-well spatial light modulators
Alex Harwit, Mr. Rowell Fernandez, Wendell D. Eades
Author Affiliations +
Abstract
We report optical modulation results on InGaAs/GaAs coupled multiple quantum well spatial light modulators. The structures consist of an n+ GaAs buffer, an undoped 250 period coupled multiple quantum well layer, and a p+ GaAs/InAs cap. The samples are probed at room temperature using photoabsorption spectroscopy. An absorption peak is observed at 969 nm, and this shifts to 982 nm as the field is increased from 0 to 67 kV/cm, in good agreement with theory. For a single pass through the structure, this results in a contrast ratio > 8:1 at 969 nm. A second modulator exhibits a contrast ratio > 8:1 at 1.04 micrometers .
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alex Harwit, Mr. Rowell Fernandez, and Wendell D. Eades "High contrast ratio InxGa1-xAs/GaAs multiple-quantum-well spatial light modulators", Proc. SPIE 1541, Infrared Sensors: Detectors, Electronics, and Signal Processing, (1 November 1991); https://doi.org/10.1117/12.49317
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Quantum wells

Gallium arsenide

Infrared sensors

Modulators

Sensors

Signal processing

Electronics

Back to Top