1 November 1991 InP-based quantum-well infrared photodetectors
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Abstract
We demonstrate the first long wavelength quantum well infrared photodetectors (QWIPs) using lattice matched n-doped In0.47As/InP and n-doped 1.3 micrometers InGaAsP/InP materials systems. The responsivity of In0.52Ga0.47As/InP detectors has been found to be larger than that for similar GaAs/AlxGa1 - xAs detectors. In addition we demonstrate the first p-doped In0.53Ga0.47As/InP QWIPs. This detector has the shortest wavelength response, (lambda) p equals 2.7 micrometers , ever achieved in a QWIP and operates at normal incidence.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sarath D. Gunapala, Sarath D. Gunapala, Barry F. Levine, Barry F. Levine, D. Ritter, D. Ritter, Robert A. Hamm, Robert A. Hamm, Morton B. Panish, Morton B. Panish, } "InP-based quantum-well infrared photodetectors", Proc. SPIE 1541, Infrared Sensors: Detectors, Electronics, and Signal Processing, (1 November 1991); doi: 10.1117/12.49315; https://doi.org/10.1117/12.49315
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