Characterization of SnO2 GIAR films

Meiman Kentjana; Hitoshi Homma; Ercan E. Alp; Timothy M. Mooney

doi:10.1117/12.51257

1 January 1992 Characterization of SnO₂ GIAR films

Meiman Kentjana, Hitoshi Homma, Ercan E. Alp, Timothy M. Mooney

Proceedings Volume 1546, Multilayer and Grazing Incidence X-Ray/EUV Optics; (1992) https://doi.org/10.1117/12.51257
Event: San Diego, '91, 1991, San Diego, CA, United States

Abstract

In an attempt to develop a monochromator of synchrotron radiation ((Delta) E approximately 10-6 eV) using grazing incidence antireflection (GIAR) principle, we made SnO2 GIAR films on Pd (buffer layer) / (alpha) -Al2O3 (substrate). Films are fabricated by magnetron sputtering technique and characterized film thickness and interface roughness by x-ray diffraction technique using the conventional and synchrotron radiation sources. We demonstrated the electronic scattering suppression of approximately 10-2 and that the present system is feasible to achieve the required goals for monochromatization of synchrotron radiation source for the energy range of 23.87 keV.

Citation Download Citation

Meiman Kentjana, Hitoshi Homma, Ercan E. Alp, and Timothy M. Mooney "Characterization of SnO₂ GIAR films", Proc. SPIE 1546, Multilayer and Grazing Incidence X-Ray/EUV Optics, (1 January 1992); https://doi.org/10.1117/12.51257

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