1 January 1992 Characterization of SnO2 GIAR films
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Abstract
In an attempt to develop a monochromator of synchrotron radiation ((Delta) E approximately 10-6 eV) using grazing incidence antireflection (GIAR) principle, we made SnO2 GIAR films on Pd (buffer layer) / (alpha) -Al2O3 (substrate). Films are fabricated by magnetron sputtering technique and characterized film thickness and interface roughness by x-ray diffraction technique using the conventional and synchrotron radiation sources. We demonstrated the electronic scattering suppression of approximately 10-2 and that the present system is feasible to achieve the required goals for monochromatization of synchrotron radiation source for the energy range of 23.87 keV.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Meiman Kentjana, Hitoshi Homma, Ercan E. Alp, Timothy M. Mooney, "Characterization of SnO2 GIAR films", Proc. SPIE 1546, Multilayer and Grazing Incidence X-Ray/EUV Optics, (1 January 1992); doi: 10.1117/12.51257; https://doi.org/10.1117/12.51257
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