Annealing studies of Ru/Si multilayer by high-angle annular dark-field microscopy and HREM

Yuanda Cheng; J. Liu; M. B. Stearns; Daniel Gorman Stearns

doi:10.1117/12.51278

1 January 1992 Annealing studies of Ru/Si multilayer by high-angle annular dark-field microscopy and HREM

Yuanda Cheng, J. Liu, M. B. Stearns, Daniel Gorman Stearns

Proceedings Volume 1547, Multilayer Optics for Advanced X-Ray Applications; (1992) https://doi.org/10.1117/12.51278
Event: San Diego, '91, 1991, San Diego, CA, United States

Abstract

Two different electron microscopy techniques were used to study a Ru/Si multilayer (ML) film. The structure of the multilayer was characterized by high-resolution electron microscopy (HREM). The multilayer compositional profile and its thermal stability were studied by using high-angle annular dark-field (HAADF) microscopy. Initially, the Ru/Si ML was found to have a well-defined multilayer structure. After annealing of the sample at 150 degree(s)C for 30 minutes, we observed that the Ru and Si layers were highly interdiffused with large Ru silicide crystals being formed in the multilayer film.

Citation Download Citation

Yuanda Cheng, J. Liu, M. B. Stearns, and Daniel Gorman Stearns "Annealing studies of Ru/Si multilayer by high-angle annular dark-field microscopy and HREM", Proc. SPIE 1547, Multilayer Optics for Advanced X-Ray Applications, (1 January 1992); https://doi.org/10.1117/12.51278

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