1 January 1992 Annealing studies of Ru/Si multilayer by high-angle annular dark-field microscopy and HREM
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Proceedings Volume 1547, Multilayer Optics for Advanced X-Ray Applications; (1992); doi: 10.1117/12.51278
Event: San Diego, '91, 1991, San Diego, CA, United States
Abstract
Two different electron microscopy techniques were used to study a Ru/Si multilayer (ML) film. The structure of the multilayer was characterized by high-resolution electron microscopy (HREM). The multilayer compositional profile and its thermal stability were studied by using high-angle annular dark-field (HAADF) microscopy. Initially, the Ru/Si ML was found to have a well-defined multilayer structure. After annealing of the sample at 150 degree(s)C for 30 minutes, we observed that the Ru and Si layers were highly interdiffused with large Ru silicide crystals being formed in the multilayer film.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuanda Cheng, J. Liu, M. B. Stearns, Daniel Gorman Stearns, "Annealing studies of Ru/Si multilayer by high-angle annular dark-field microscopy and HREM", Proc. SPIE 1547, Multilayer Optics for Advanced X-Ray Applications, (1 January 1992); doi: 10.1117/12.51278; https://doi.org/10.1117/12.51278
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KEYWORDS
Multilayers

Ruthenium

Silicon

Crystals

Annealing

Diffraction

X-rays

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