1 October 1991 Performance of milliKelvin Si bolometers as x-ray and exotic particle detectors
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Abstract
Silicon bolometers are currently under development for milliKelvin operation; these devices are being produced using Si wafer fabrication technology. The design and performance of individual bolometers, using doped layers with a thickness in the range 0.1 to 3 (mu) , are described. The use of epitaxial growth to replace ion implantation for improved performance is described and initial results reported.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. C. Zammit, C. C. Zammit, Timothy J. Sumner, Timothy J. Sumner, M. J. Lea, M. J. Lea, P. Fozooni, P. Fozooni, Ian D. Hepburn, Ian D. Hepburn, } "Performance of milliKelvin Si bolometers as x-ray and exotic particle detectors", Proc. SPIE 1549, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy II, (1 October 1991); doi: 10.1117/12.48345; https://doi.org/10.1117/12.48345
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