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1 December 1991 Holographic diffraction gratings on the base of chalcogenide semiconductors
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Abstract
Results of the investigations of holographic diffraction grating (with spatial frequencies from 600 to 3600 mm-I) production processes on the thin- film light-sensitive systems As2S3-Ag,As2Se3-Ag,GeSe2-Ag and thin film layers As2S3,As2Se3 and GeSe2 are presented in this report. Experimental investigations and model calculations of relief formation processes on such resist media were carried out. The possibility of composite relief production in chalcogenide vitreous semiconductor (ChVS) metal structures with the help of photodoping and photostimulated solubility changes in ChVS is shown. Diffraction efficiency η dependencies from exposition, wavelength, developing conditions, and additional uniform exposure were investigated. Ways of optimizing such parameters are shown. The η spectral and angular dependencies of the gratings were studied, and results of electronmicroscopic groove profile investigations are presented. Holographic gratings with 70 - 85% efficiency for polarized light and stray light level approximately 10-6 were produced.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ivan Z. Indutnyi, Igor Iosifovitc Robur, Peter F. Romanenko, and Alexander V. Stronski "Holographic diffraction gratings on the base of chalcogenide semiconductors", Proc. SPIE 1555, Computer and Optically Generated Holographic Optics; 4th in a Series, (1 December 1991); https://doi.org/10.1117/12.50649
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