In-situ measurement technique for solution growth in compound semiconductors

Yuko Inatomi; Kazuhiko Kuribayashi

doi:10.1117/12.49591

1 December 1991 In-situ measurement technique for solution growth in compound semiconductors

Yuko Inatomi, Kazuhiko Kuribayashi

Proceedings Volume 1557, Crystal Growth in Space and Related Optical Diagnostics; (1991) https://doi.org/10.1117/12.49591
Event: San Diego, '91, 1991, San Diego, CA, United States

Abstract

The effect of mixing in liquid upon the dissolution and growth rates on the faceted surface during solution growth process in GaP has been studied by means of the in situ observation setup, which was composed of an infrared microscope with an interferometer. The measured dissolution rates agree remarkably well with the boundary layer model, in which it is assumed that solute concentration in the liquid ahead of the boundary layer is homogenized by convection and the surface concentration is not equal to the equilibrium value. The estimated thickness of the boundary layer suggests the existence of the convective flow in the liquid, and this effect is certified with unidirectional solidification in succinonitrile-acetone, which is a transparent alloy system, by means of the in situ observation technique with a common-path microscope interferometer.

Citation Download Citation

Yuko Inatomi and Kazuhiko Kuribayashi "In-situ measurement technique for solution growth in compound semiconductors", Proc. SPIE 1557, Crystal Growth in Space and Related Optical Diagnostics, (1 December 1991); https://doi.org/10.1117/12.49591

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