1 December 1991 Modeling of InP metal organic chemical vapor deposition
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Abstract
The growth of InP by metalorganic chemical vapor deposition (MOCVD) in a horizontal reactor is being modeled with a commercially available computational fluid dynamics modeling code. The mathematical treatment of the MOCVD process has four primary areas of concern: (1) transport phenomena, (2) chemistry, (3) boundary conditions, and (4) numerical solution methods. The transport processes involved in CVD are described by conservation of total mass, momentum, energy, and atomic species. Momentum conservation is described by a generalized form of the Navier-Stokes equation for a Newtonian fluid and laminar flow. The effect of Soret diffusion on the transport of particular chemical species and on the predicted deposition rate is examined. Both gas-phase and surface chemical reactions are employed in the model. Boundary conditions are specified at the inlet and walls of the reactor for temperature, fluid flow, and chemical species. The coupled set of equations described above is solved by a finite difference method over a nonuniform rectilinear grid in both two and three dimensions. The results of the 2-D computational model is presented for gravity levels of zero- and one-g. The predicted growth rates at one-g are compared to measured growth rates on fused silica substrates.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Linda R. Black, Ivan O. Clark, Jianming Kui, William A. Jesser, "Modeling of InP metal organic chemical vapor deposition", Proc. SPIE 1557, Crystal Growth in Space and Related Optical Diagnostics, (1 December 1991); doi: 10.1117/12.49583; https://doi.org/10.1117/12.49583
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