1 December 1991 New optical approaches to the quantitative characterization of crystal growth, segregation, and defect formation
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Abstract
The meaningful exploration of the potential of reduced gravity environment for the advancement of crystal growth is complex. It is to a significant extent contingent on the conduct of reproducible experiments in a quantifiable environment. However, most of all it depends on our ability to extract from grown matrices quantitative analytical information on a scale commensurate with that of gravitation related segregation effects and defect structures. A new optical approach, based on NIR microscopy supported by computational image analysis and contrast enhancement, has recently been developed and applied to the characterization of elemental and compound semiconductors. This approach permitted, for the first time, a quantitative microsegregation analysis of GaAs and InP; using NIR dark field illumination in transmission mode makes it now possible to detect submicron precipitates in semi-insulating GaAs. The developed techniques, providing for rapid, quantitative, nondestructive analysis, have been shown to be fully compatible with telescience operation.
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D. J. Carlson, D. J. Carlson, Michael J. Wargo, Michael J. Wargo, X. Z. Cao, X. Z. Cao, August F. Witt, August F. Witt, "New optical approaches to the quantitative characterization of crystal growth, segregation, and defect formation", Proc. SPIE 1557, Crystal Growth in Space and Related Optical Diagnostics, (1 December 1991); doi: 10.1117/12.49592; https://doi.org/10.1117/12.49592
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