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1 December 1991 Heterostructure photosensitive memory
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Abstract
A new photosensitive memory device with semiconductor-thin polymer-semiconductor (STPS) structure is described. A `writing' light pulse drastically changes a basic current mechanism. As a result, the dark current increases many times. Moreover, new quality phenomena appears, such as photocurrent amplification and photo-induced self-oscillations.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir A. Manasson, Lev S. Sadovnik, and Ray T. Chen "Heterostructure photosensitive memory", Proc. SPIE 1559, Photopolymer Device Physics, Chemistry, and Applications II, (1 December 1991); https://doi.org/10.1117/12.50669
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