1 December 1991 KTP waveguides for frequency upconversion of strained-layer InGaAs laser diodes
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Abstract
KTP waveguides are being investigated for frequency upconversion of strained-layer InGaAs lasers in the 900 - 1100 nm range. Phasematching for the lowest-order mode interaction can be obtained using the modal dispersion properties of these diffused waveguides and modeling calculations have been used to determine the waveguide parameters required for phasematching to occur at a particular wavelength. Ion-exchange in pure RbNO3 has been used to form a waveguide that permits phasematched frequency doubling at wavelengths near 1040 nm.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William P. Risk, William P. Risk, Ch. K. Nadler, Ch. K. Nadler, } "KTP waveguides for frequency upconversion of strained-layer InGaAs laser diodes", Proc. SPIE 1561, Inorganic Crystals for Optics, Electro-Optics, and Frequency Conversion, (1 December 1991); doi: 10.1117/12.50760; https://doi.org/10.1117/12.50760
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