Paper
1 December 1991 Progress in planarized vertical-cavity surface-emitting laser devices and arrays
Robert A. Morgan, Leo M. F. Chirovsky, Marlin W. Focht, Gregory D. Guth, Moses T. Asom, Ronald E. Leibenguth, K. Cyrus Robinson, Yong-Hee Lee, Jack L. Jewell
Author Affiliations +
Abstract
We report batch-processed, totally planar, vertical-cavity top surface emitting GaAs/AlGaAs laser devices and arrays. Different size devices are studied experimentally. We measure continuous-wave threshold currents down to 1.7 mA and output powers > 3.7 mW at room temperature. We also discuss interesting characteristics such as differential quantum efficiencies exceeding unity and multi-transverse mode behavior. An array having 64 X 1 individually-accessed elements is characterized and shown to have uniform room-temperature continuous-wave operating characteristics in threshold current approximately equals 2.1 +/- 0.1 mA, wavelength approximately equals 849.4 +/- 0.8 nm, and output power approximately equals 0.5 +/- 0.1 mW.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert A. Morgan, Leo M. F. Chirovsky, Marlin W. Focht, Gregory D. Guth, Moses T. Asom, Ronald E. Leibenguth, K. Cyrus Robinson, Yong-Hee Lee, and Jack L. Jewell "Progress in planarized vertical-cavity surface-emitting laser devices and arrays", Proc. SPIE 1562, Devices for Optical Processing, (1 December 1991); https://doi.org/10.1117/12.50792
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Cited by 40 scholarly publications.
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KEYWORDS
Vertical cavity surface emitting lasers

Mirrors

Optical signal processing

Resistance

Continuous wave operation

Semiconducting wafers

Reflectivity

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