An optoelectronic integrated circuit (OEIC) suitable for applications requiring highly parallel optical
interconnections has been designed, fabricated and demonstrated. The chip integrates optical emitters, optical
detectors and GaAs based electronic I.C.s on the same substrate. Its architecture consists of a two-dimensional
8x8 array of cells, with each cell containing a double heterojunction Light Emitting Diode (LED), a lateral ionimplanted
photoconducting detector (PD), and a GaAs Metal-Semiconductor Field Effect Transistor (MESFET)
circuit which performs amplification of the detector signal, thresholding, memory and LED drive functions. The
chip consists of a total of 1300 FETs, 64 LEDs, 64 photodetectors and 500 thin-film resistors. Discrete devices
fabricated with the integrated process have performance characteristics similar to those of non-integrated devices.
The electrical and optical functionality of 8x8 arrays has been demonstrated. However, a feedback problem has
been shown to exist between the LEDs and LED driver FETs. The source of this problem is discussed.