1 August 1991 LCVD fabrication of polycrystalline Si pressure sensor
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Proceedings Volume 1572, International Conference on Optical Fibre Sensors in China OFS(C) '91; (1991) https://doi.org/10.1117/12.50065
Event: International Conference on Optical Fibre Sensors in China, 1991, Wuhan, China
Abstract
The authors fabricated a polycrystalline Si thin film from SiH4 on SiO2 substrates with pulsed KrF laser irradiation (248 nm or 5 eV, peak energy densities of 50 mJcm-2, repetition rates 0.003 - 10 Hz) at temperature Ts 570 degree(s)C. The thickness of the film was about 1.5 micrometers . The deposited rates were estimated about 300 A/min. The resistivity was over 106 (Omega) cm. Film growth on SiO2 substrates at Ts equals 570 degree(s)C were polycrystalline Si as judged by both x-ray diffraction and SEM. Polycrystalline orientations were <111> and <211>, respectively. The film had average grain sizes of 0.5 micrometers with a <111> preferred orientation. A pressure sensor with the polycrystalline Si film was fabricated by laser chemical vapor deposition. The sensor has good linearity and operation temperature range from -60 degree(s)C to 200 degree(s)C. The sensitivity was 10 mv/Vbar.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei Zhang, Wei Zhang, Xiao-Ru Wang, Xiao-Ru Wang, } "LCVD fabrication of polycrystalline Si pressure sensor", Proc. SPIE 1572, International Conference on Optical Fibre Sensors in China OFS(C) '91, (1 August 1991); doi: 10.1117/12.50065; https://doi.org/10.1117/12.50065
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