1 March 1992 FTIR characterization of epitaxial silicon layers
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Proceedings Volume 1575, 8th Intl Conf on Fourier Transform Spectroscopy; (1992) https://doi.org/10.1117/12.56481
Event: Eighth International Conference on Fourier Transform Spectroscopy, 1991, Lubeck-Travemunde, Germany
Abstract
FTIR reflectance spectroscopy was employed in an attempt to nondestructively determine the thickness as well as the dopant concentration of epitaxial silicon layers in p-/p+ structures on p-substrates.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. A. Engelbrecht, J. A. Engelbrecht, R. L. Kleinhenz, R. L. Kleinhenz, R. A. Bendernagel, R. A. Bendernagel, } "FTIR characterization of epitaxial silicon layers", Proc. SPIE 1575, 8th Intl Conf on Fourier Transform Spectroscopy, (1 March 1992); doi: 10.1117/12.56481; https://doi.org/10.1117/12.56481
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