1 March 1992 FTIR spectroscopy of layered structures: thin solid films, coated substrates, profiles, multilayers
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Proceedings Volume 1575, 8th Intl Conf on Fourier Transform Spectroscopy; (1992) https://doi.org/10.1117/12.56299
Event: Eighth International Conference on Fourier Transform Spectroscopy, 1991, Lubeck-Travemunde, Germany
Abstract
Thin solid films and surfaces are characterized by FTIR-spectroscopy, based on reflectance and transmittance measurements, in particular with polarized light at oblique incidence. Thus two independent data sets for s- and ppolarization are available. At p-polarization additional absorption lines at the zeros of the dielectric function are observed (Berreman-effect). The interpretation of the measured spectra is carried out by the following procedure: the observed reflectance and transmittance are simulated by spectra, calculated from a model by an optimum fit of the model parameters. As a result the specimens are characterized in terms of vibronic resonances, contribution of free electrons and holes, thicknesses of the various layers in a stack, and of profiles of chemical composition. Thicknesses and roughness of very thin layers are determined from measurements of the reflectance of X-rays at grazing incidence. The interpretation is also based on model simulations. In detail the following examples are discusses: thin Ag-films deposited on glass, oxide films on semiconductors and metals, depth depending profiles ofextrinsic atoms due to diffusion or ion implantation, and semiconducting multilayer structures. The reliability of the non-destructive IR-method is compared with other relevant analytic methods as SIMS, RBS, and AES.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter Grosse, "FTIR spectroscopy of layered structures: thin solid films, coated substrates, profiles, multilayers", Proc. SPIE 1575, 8th Intl Conf on Fourier Transform Spectroscopy, (1 March 1992); doi: 10.1117/12.56299; https://doi.org/10.1117/12.56299
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